rus
Issue #6/2022
O. Nalivaiko, A. Turtsevich, V. Plebanovich, V. Rogovoy
INTERCOMPONENT INSULATION FOR SUBMICRON ICs USING DIELECTRIC FILLED GROOVES
INTERCOMPONENT INSULATION FOR SUBMICRON ICs USING DIELECTRIC FILLED GROOVES
DOI: 10.22184/1992-4178.2022.217.6.134.140
The article presents the process for creating intercomponent insulation, which makes it possible to reduce the structure relief height to less than 0.1 μm and to narrow down the insulation region width to 0.5 μm.
The article presents the process for creating intercomponent insulation, which makes it possible to reduce the structure relief height to less than 0.1 μm and to narrow down the insulation region width to 0.5 μm.
Теги: intercomponent insulation local silicon oxidation mos technology packing density локальное окисление кремния межкомпонентная изоляция моп-технология плотность упаковки
INTERCOMPONENT INSULATION FOR SUBMICRON ICs USING DIELECTRIC FILLED GROOVES
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