rus
Competent opinion
P. Kutsko
WISH WE’D MOVE FROM THE STAGE OF FORMATION TO THE STAGE OF PROSPERITY DOI: 10.22184/1992-4178.2026.256.4.12.18
WISH WE’D MOVE FROM THE STAGE OF FORMATION TO THE STAGE OF PROSPERITY DOI: 10.22184/1992-4178.2026.256.4.12.18
Column of radio-electronic industry department
Report from a company
Yu. Kovalevsky
LEAN MANUFACTURING AND AUTOMATION IN DEVICE ENGINEERING IN PRACTICE VISIT TO THE PRODUCTION FACILITY OF PROMENERGO LLC DOI: 10.22184/1992-4178.2026.256.4.38.49
LEAN MANUFACTURING AND AUTOMATION IN DEVICE ENGINEERING IN PRACTICE VISIT TO THE PRODUCTION FACILITY OF PROMENERGO LLC DOI: 10.22184/1992-4178.2026.256.4.38.49
Industry Events
E. Kasparova
DISCUSSION BATTLE “ARTIFICIAL INTELLIGENCE: A NEW INDUSTRY OR A HYPE BUBBLE?” AT EXPOELECTRONICA | EXPOCIFRA 2026 DOI: 10.22184/1992-4178.2026.256.4.28.34
DISCUSSION BATTLE “ARTIFICIAL INTELLIGENCE: A NEW INDUSTRY OR A HYPE BUBBLE?” AT EXPOELECTRONICA | EXPOCIFRA 2026 DOI: 10.22184/1992-4178.2026.256.4.28.34
NEWS
INDUSTRIAL AND SPECIAL-PURPOSE ELECTRONICS
E. Kvas
MODEL OF SIGNAL FORMATION IN AN OPTOELECTRONIC LIQUID LEVEL CONTROL SYSTEM The article proposes a model for signal formation
in an optoelectronic system that establishes a relationship between the liquid level, the optical radiation power at the input
of the photodetector, the output voltage of the analog path
and the digital code of the ADC. The model can be used at the design stage of an optical-electronic liquid level control system to calculate the parameters of the signal processing path.
MODEL OF SIGNAL FORMATION IN AN OPTOELECTRONIC LIQUID LEVEL CONTROL SYSTEM The article proposes a model for signal formation
in an optoelectronic system that establishes a relationship between the liquid level, the optical radiation power at the input
of the photodetector, the output voltage of the analog path
and the digital code of the ADC. The model can be used at the design stage of an optical-electronic liquid level control system to calculate the parameters of the signal processing path.
Tags: measuring channel sensitivity optical-electronic liquid level control system photodetector sensor output signal simulation моделирование выходных сигналов датчика оптико-электронная система контроля уровня жидкости фотоприемник чувствительность измерительного канала
Production Management
Sh. Shugaepov, R. Akhmetgaliev, V. Egoshin, D. Shipitsyn
INNOVATIVE APPROACHES TO MICROWAVE PRODUCT MANUFACTURING AT THE SEMICONDUCTOR DEVICES PLANT DOI: 10.22184/1992-4178.2026.256.4.74.76
Implementation of a range of measures – from developing mathematical simulation competencies to introducing high-precision measuring equipment – allowed the Semiconductor Devices Plant to reach a new level of microwave product manufacturing.
INNOVATIVE APPROACHES TO MICROWAVE PRODUCT MANUFACTURING AT THE SEMICONDUCTOR DEVICES PLANT DOI: 10.22184/1992-4178.2026.256.4.74.76
Implementation of a range of measures – from developing mathematical simulation competencies to introducing high-precision measuring equipment – allowed the Semiconductor Devices Plant to reach a new level of microwave product manufacturing.
Tags: metal-ceramic packages modernization tungsten-molybdenum-based metallization pastes металлизационные пасты на основе вольфрама и молибдена металлокерамические корпуса модернизация
Data Collection, Processing and Communication Systems
M. Makushin
STATUS OF 6G NETWORK DEVELOPMENT IN LEADING COUNTRIES. PART 1 DOI: 10.22184/1992-4178.2026.256.4.120.128
The article examines the technological aspects of 5G and 6G network development and the challenges of their implementation. It also discusses the status of 6G design in China, Japan, South Korea, India, EU and the US.
STATUS OF 6G NETWORK DEVELOPMENT IN LEADING COUNTRIES. PART 1 DOI: 10.22184/1992-4178.2026.256.4.120.128
The article examines the technological aspects of 5G and 6G network development and the challenges of their implementation. It also discusses the status of 6G design in China, Japan, South Korea, India, EU and the US.
Tags: 5g and 6g networks 5g- и 6g-сети ai deployment iot robots стандарты standards technology uavs бпла ии развертывание роботы технология
Microwave electronics
N. Varfolomeev, M. Polunin, A. Solodunov
DOHERTY POWER AMPLIFIER FOR TELECOMMUNICATION SYSTEMS DEVELOPED BY PKK MILANDR JSC DOI: 10.22184/1992-4178.2026.256.4.50.51
The article discusses the features of Doherty power amplifier for telecommunication systems in the frequency range of 2,3–2,4 GHz based on GaN microwave transistors, which was developed at PKK Milandr JSC.
DOHERTY POWER AMPLIFIER FOR TELECOMMUNICATION SYSTEMS DEVELOPED BY PKK MILANDR JSC DOI: 10.22184/1992-4178.2026.256.4.50.51
The article discusses the features of Doherty power amplifier for telecommunication systems in the frequency range of 2,3–2,4 GHz based on GaN microwave transistors, which was developed at PKK Milandr JSC.
Tags: doherty power amplifier fourth-generation cellular base stations gan microwave transistors gan свч-транзисторы базовые станции сотовой связи четвертого поколения усилитель мощности догерти
V. Kochemasov, T. Kosichkina
GaN TRANSISTORS. PART 1 DOI: 10.22184/1992-4178.2026.256.4.52.59
The article considers the characteristics and features of high electron mobility transistors based on gallium nitride. Information on transistors from domestic and foreign manufacturers designed for use in microwave power amplifiers is provided.
GaN TRANSISTORS. PART 1 DOI: 10.22184/1992-4178.2026.256.4.52.59
The article considers the characteristics and features of high electron mobility transistors based on gallium nitride. Information on transistors from domestic and foreign manufacturers designed for use in microwave power amplifiers is provided.
Tags: gallium nitride high electron mobility transistors microwave devices power amplifiers wide band gap нитрид галлия свч-устройства транзисторы с высокой подвижностью электронов усилители мощности широкая запрещенная зона
E. Verkhovtsev
QATRON VACUUM MICROWAVE DEVICES: COMPONENTS FOR SYSTEMS WHERE SEMICONDUCTORS REACH THEIR LIMITS DOI: 10.22184/1992-4178.2026.256.4.60.63
The article provides an overview of Qatron vacuum microwave devices: magnetrons, traveling-wave tubes, klystrons, thyratrons and vacuum capacitors. Applications are discussed, as well as the possibilities for customizing serial products to meet customer requirements.
QATRON VACUUM MICROWAVE DEVICES: COMPONENTS FOR SYSTEMS WHERE SEMICONDUCTORS REACH THEIR LIMITS DOI: 10.22184/1992-4178.2026.256.4.60.63
The article provides an overview of Qatron vacuum microwave devices: magnetrons, traveling-wave tubes, klystrons, thyratrons and vacuum capacitors. Applications are discussed, as well as the possibilities for customizing serial products to meet customer requirements.
Tags: klystrons magnetrons qatron thyratrons traveling-wave tubes vacuum capacitors тиратроны vacuum microwave devices вакуумные конденсаторы вакуумные свч-приборы клистроны лампы бегущей волны магнетроны
Reliability and tests
S. Kovalev, D. Semenov, S. Skovorodnikov
NON-DESTRUCTIVE METHODS OF TESTING THE PARAMETERS OF DIELECTRIC PLATES DOI: 10.22184/1992-4178.2026.256.4.78.82
Incoming inspection of dielectric material parameters is essential to ensure the proper quality of manufactured products, especially in critical microwave applications. The article discusses
two measuring cell designs for the rapid monitoring of dielectric permeability and loss tangent of sheet materials.
NON-DESTRUCTIVE METHODS OF TESTING THE PARAMETERS OF DIELECTRIC PLATES DOI: 10.22184/1992-4178.2026.256.4.78.82
Incoming inspection of dielectric material parameters is essential to ensure the proper quality of manufactured products, especially in critical microwave applications. The article discusses
two measuring cell designs for the rapid monitoring of dielectric permeability and loss tangent of sheet materials.
Tags: coaxial resonator dielectric permeability loss tangent measuring cell slot ring resonator диэлектрическая проницаемость измерительная ячейка коаксиальный резонатор тангенс угла диэлектрических потерь щелевой кольцевой резонатор
A. Stolyarenko, E. Morozov, K. Roshchin, I. Glotov
APPROACHES TO TESTING SATELLITE COMMUNICATION SYSTEMS: FROM RADIO CHANNEL EMULATION TO SEMI-NATURALISTIC TESTS DOI: 10.22184/1992-4178.2026.256.4.86.88
The article presents modern approaches to testing satellite data transmission systems, focusing on a comprehensive method of semi-naturalistic simulation integrated with OTA testing in an anechoic chamber. This method allows for the simulation of complex dynamic scenarios under controlled conditions, ensuring high correlation between laboratory testing and real-world system operating conditions.
APPROACHES TO TESTING SATELLITE COMMUNICATION SYSTEMS: FROM RADIO CHANNEL EMULATION TO SEMI-NATURALISTIC TESTS DOI: 10.22184/1992-4178.2026.256.4.86.88
The article presents modern approaches to testing satellite data transmission systems, focusing on a comprehensive method of semi-naturalistic simulation integrated with OTA testing in an anechoic chamber. This method allows for the simulation of complex dynamic scenarios under controlled conditions, ensuring high correlation between laboratory testing and real-world system operating conditions.
Tags: 5g ntn satellite communication channels anechoic chamber ota testing ota-тестирование radio channel emulation satellite system testing semi-naturalistic simulation безэховая камера полунатурное моделирование спутниковые каналы связи 5g ntn тестирование спутниковых систем эмуляция радиоканалов
for Engineers
Production technologies
A. Sobolev
MATHEMATICAL APPARATUS AND METHODOLOGY OF ZERO-DIMENSIONAL PLASMA SIMULATION DOI: 10.22184/1992-4178.2026.256.4.90.95
Zero-dimensional plasma simulation allows for the selection of key parameters for plasma-chemical processes. The article describes the methodology for zero-dimensional plasma simulation and examines two classes of models: the global model and the collisional radiative model.
MATHEMATICAL APPARATUS AND METHODOLOGY OF ZERO-DIMENSIONAL PLASMA SIMULATION DOI: 10.22184/1992-4178.2026.256.4.90.95
Zero-dimensional plasma simulation allows for the selection of key parameters for plasma-chemical processes. The article describes the methodology for zero-dimensional plasma simulation and examines two classes of models: the global model and the collisional radiative model.
Tags: collisional radiative model global plasma model particle balance plasma-chemical processes zero-dimensional plasma simulation баланс частиц глобальная модель плазмы нуль-мерное моделирование плазмы плазмохимические процессы столкновительно-излучательная модель
E. Plotnikova
ANALYSIS OF THE TECHNOLOGICAL CYCLE OF MANUFACTURING AN n-CHANNEL MOSFET USING TCAD DOI: 10.22184/1992-4178.2026.256.4.96.104
The article analyzes the stages of the manufacturing process for an n-channel MOSFET using specified parameters and builds a model of this transistor in TCAD. The parameters and characteristics of the resulting model are compared with those specified in the design specification.
ANALYSIS OF THE TECHNOLOGICAL CYCLE OF MANUFACTURING AN n-CHANNEL MOSFET USING TCAD DOI: 10.22184/1992-4178.2026.256.4.96.104
The article analyzes the stages of the manufacturing process for an n-channel MOSFET using specified parameters and builds a model of this transistor in TCAD. The parameters and characteristics of the resulting model are compared with those specified in the design specification.
Tags: n-channel mosfet n-канальный моп-транзистор process flow process-level cad spice model spice-модель transient response переходные характеристики сапр технологического уровня технологический маршрут
Micro and nanostructures
D. Sukhanov
MINIATURE PHOTONIC SENSORS: A NEW LOOK AT MULTI-LEVEL OPTICAL SYSTEMS The article discusses technologies for manufacturing optical components directly on a semiconductor wafer, which provide submicron precision of lens geometry, as well as scalability and cost reduction in mass production.
MINIATURE PHOTONIC SENSORS: A NEW LOOK AT MULTI-LEVEL OPTICAL SYSTEMS The article discusses technologies for manufacturing optical components directly on a semiconductor wafer, which provide submicron precision of lens geometry, as well as scalability and cost reduction in mass production.