rus
Issue #2/2025
A. Kisсhinsky, V. Minnebaev
MICROWAVE RADIOELECTRONICS – MOVING FORWARD SCIENCE AND TECHNOLOGY CONFERENCE “RESVCH-2024”. PART 1
MICROWAVE RADIOELECTRONICS – MOVING FORWARD SCIENCE AND TECHNOLOGY CONFERENCE “RESVCH-2024”. PART 1
DOI: 10.22184/1992-4178.2025.243.2.42.48
The article describes promising developments presented by participants of the conference «RESVCH-2024», dedicated to the 20th anniversary of Microwave Systems JSC. The first part of the work summarizes the materials of two sections. The reports of section 1 were devoted to modern technologies for the manufacture of microwave transistors and MIS. Section 2 discussed the designs, parameters of microwave components and issues of their reliability.
Tags: epitaxial growth gan transistors gan-транзисторы hemt transistors heterostructures microwave electronics гетероструктуры немт-транзисторы свч-электроника эпитаксиальный рост
Subscribe to the journal Electronics: STB to read the full article.
The article describes promising developments presented by participants of the conference «RESVCH-2024», dedicated to the 20th anniversary of Microwave Systems JSC. The first part of the work summarizes the materials of two sections. The reports of section 1 were devoted to modern technologies for the manufacture of microwave transistors and MIS. Section 2 discussed the designs, parameters of microwave components and issues of their reliability.
Tags: epitaxial growth gan transistors gan-транзисторы hemt transistors heterostructures microwave electronics гетероструктуры немт-транзисторы свч-электроника эпитаксиальный рост
Subscribe to the journal Electronics: STB to read the full article.
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