rus
Issue #2/2025
D. Sukhanov
EXTREME SILICON WAFERS THINNING AND FORMATION OF NANO TSV FOR 3D HETEROGENEOUS INTEGRATION
EXTREME SILICON WAFERS THINNING AND FORMATION OF NANO TSV FOR 3D HETEROGENEOUS INTEGRATION
DOI: 10.22184/1992-4178.2025.243.2.112.114
The article considers the state-of-the art technologies that make
it possible to thin silicon wafers to 500 nm and form nano TSV
with dimensions of 180x250 nm and a depth of 500 nm.
Tags: silicon wafer thinning tsv кремниевая пластина утонение
Subscribe to the journal Electronics: STB to read the full article.
The article considers the state-of-the art technologies that make
it possible to thin silicon wafers to 500 nm and form nano TSV
with dimensions of 180x250 nm and a depth of 500 nm.
Tags: silicon wafer thinning tsv кремниевая пластина утонение
Subscribe to the journal Electronics: STB to read the full article.
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