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DOI: 10.22184/1992-4178.2026.255.3.164.169
The paper describes the first three stages of the silicon carbide-based integrated circuit manufacturing cycle: single crystal growth, wafer fabrication and epitaxy. An overview of current technological solutions and equipment used at these stages is presented.
Tags: cutting epitaxy power components silicon carbide single crystal growth карбид кремния резка рост монокристалла силовые компоненты эпитаксия
Subscribe to the journal Electronics: STB to read the full article.
The paper describes the first three stages of the silicon carbide-based integrated circuit manufacturing cycle: single crystal growth, wafer fabrication and epitaxy. An overview of current technological solutions and equipment used at these stages is presented.
Tags: cutting epitaxy power components silicon carbide single crystal growth карбид кремния резка рост монокристалла силовые компоненты эпитаксия
Subscribe to the journal Electronics: STB to read the full article.
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