rus
Issue #9/2025
E. Litvinenko, V. Polevikov, A. Krasyukov
DEVELOPMENT OF A HALL EFFECT SENSOR BASED ON A SOI MOSFET WITH VOLTAGE CONTROL
DEVELOPMENT OF A HALL EFFECT SENSOR BASED ON A SOI MOSFET WITH VOLTAGE CONTROL
DOI: 10.22184/1992-4178.2025.251.9.62.68
The article presents a SOI MOSFET Hall effect sensor developed at ZNTC JSC. An experimental integrated circuit for non-contact magnetic field sensing with a linear analog output was designed and tested. The obtained characteristics of the device demonstrate its applicability in various technical fields requiring precise measurements and control.
Tags: hall effect sensor non-contact measurement silicon on insulator soi mosfet бесконтактное измерение датчик холла кни моп-транзистор кремний на изоляторе
Subscribe to the journal Electronics: STB to read the full article.
The article presents a SOI MOSFET Hall effect sensor developed at ZNTC JSC. An experimental integrated circuit for non-contact magnetic field sensing with a linear analog output was designed and tested. The obtained characteristics of the device demonstrate its applicability in various technical fields requiring precise measurements and control.
Tags: hall effect sensor non-contact measurement silicon on insulator soi mosfet бесконтактное измерение датчик холла кни моп-транзистор кремний на изоляторе
Subscribe to the journal Electronics: STB to read the full article.
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