DOI: 10.22184/1992-4178.2024.237.6.42.46

The article describes the effects of degradation of electrical and parametric indicators of semiconductor structures when exposed to ionizing radiation. A classification of reversible
and irreversible radiation effects is given. The result of the work is a theoretical model of the physics of the interaction of special factors with the semiconductor structure.

sitemap

Разработка: студия Green Art