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DOI: 10.22184/1992-4178.2024.239.8.112.119
In the next decade EUV lithography will be used to form topological elements measured in nanometers and angstroms. The article considers the single and multiple patterning techniques.
Tags: euv lithography technology high numerical aperture (na) patterning techniques высокая числовая апертура (na) методики формирования рисунка технология euv-литографии
Subscribe to the journal Electronics: STB to read the full article.
In the next decade EUV lithography will be used to form topological elements measured in nanometers and angstroms. The article considers the single and multiple patterning techniques.
Tags: euv lithography technology high numerical aperture (na) patterning techniques высокая числовая апертура (na) методики формирования рисунка технология euv-литографии
Subscribe to the journal Electronics: STB to read the full article.
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