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DOI: 10.22184/1992-4178.2024.239.8.112.119
In the next decade EUV lithography will be used to form topological elements measured in nanometers and angstroms. The article considers the single and multiple patterning techniques.
In the next decade EUV lithography will be used to form topological elements measured in nanometers and angstroms. The article considers the single and multiple patterning techniques.
Теги: euv lithography technology high numerical aperture (na) patterning techniques высокая числовая апертура (na) методики формирования рисунка технология euv-литографии
EUV LITHOGRAPHY: WHAT IS EXPECTED IN 2025?
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