rus
Issue #5/2026
A. Sobolev
DIAGNOSTICS AND ZERO-DIMENSIONAL SIMULATION OF CF4+O2+Ar PLASMA IN A REACTIVE ION ETCHING REACTOR
DIAGNOSTICS AND ZERO-DIMENSIONAL SIMULATION OF CF4+O2+Ar PLASMA IN A REACTIVE ION ETCHING REACTOR
DOI: 10.22184/1992-4178.2026.257.5.82.86
Mathematical simulation of plasma can be used to optimize reactive ion etching processes without the need for numerous costly experiments. The article presents a method for mathematical simulation of plasma-chemical processes based
on a zero-dimensional global model combined
with plasma probe diagnostics.
Tags: langmuir double probe low-temperature gas-discharge plasma reactive ion etching zero-dimensional plasma simulation двойной зонд лангмюра низкотемпературная газоразрядная плазма нуль-мерное моделирование плазмы реактивно-ионное травление
Subscribe to the journal Electronics: STB to read the full article.
Mathematical simulation of plasma can be used to optimize reactive ion etching processes without the need for numerous costly experiments. The article presents a method for mathematical simulation of plasma-chemical processes based
on a zero-dimensional global model combined
with plasma probe diagnostics.
Tags: langmuir double probe low-temperature gas-discharge plasma reactive ion etching zero-dimensional plasma simulation двойной зонд лангмюра низкотемпературная газоразрядная плазма нуль-мерное моделирование плазмы реактивно-ионное травление
Subscribe to the journal Electronics: STB to read the full article.
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