rus
Issue #9/2024
I. Semeykin
GaN POWER AND MICROWAVE TRANSISTORS BY NIIET JSC: EXISTING SOLUTIONS AND PROSPECTS
GaN POWER AND MICROWAVE TRANSISTORS BY NIIET JSC: EXISTING SOLUTIONS AND PROSPECTS
DOI: 10.22184/1992-4178.2024.240.9.56.62
The article covers advantages of GaN technology for power and microwave electronics, some data on its development history, current state and prospects, as well as information
about capabilities and plans of NIIET JSC (an “Element” Group company) regarding GaN parts production and characteristics
of a number of the company’s power and microwave transistors.
Tags: electronic components gan-on-si gan semiconductor devices microwave transistor power switching transistor нитрид галлия на кремнии полупроводниковые приборы на основе нитрида галлия свч-транзистор силовой переключающий транзистор электронная компонентная база
Subscribe to the journal Electronics: STB to read the full article.
The article covers advantages of GaN technology for power and microwave electronics, some data on its development history, current state and prospects, as well as information
about capabilities and plans of NIIET JSC (an “Element” Group company) regarding GaN parts production and characteristics
of a number of the company’s power and microwave transistors.
Tags: electronic components gan-on-si gan semiconductor devices microwave transistor power switching transistor нитрид галлия на кремнии полупроводниковые приборы на основе нитрида галлия свч-транзистор силовой переключающий транзистор электронная компонентная база
Subscribe to the journal Electronics: STB to read the full article.
Readers feedback
