rus
Issue #7/2022
V. Belkov, P. Kurshev, I. Semeykin, A. Tsotsorin
GALLIUM NITRIDE INTERNAL MATCHED MICROWAVE POWER TRANSISTOR FOR ADVANCED TELECOMMUNICATION EQUIPMENT AND OTHER APPLICATIONS
GALLIUM NITRIDE INTERNAL MATCHED MICROWAVE POWER TRANSISTOR FOR ADVANCED TELECOMMUNICATION EQUIPMENT AND OTHER APPLICATIONS
DOI: 10.22184/1992-4178.2022.218.7.90.93
The article provides information on features, advantages, and performance parameters of a 50 W internally matched GaN microwave power transistor in a space saving package by NIIET JSC designed for the demanded in advanced telecommunication technologies frequency range.
The article provides information on features, advantages, and performance parameters of a 50 W internally matched GaN microwave power transistor in a space saving package by NIIET JSC designed for the demanded in advanced telecommunication technologies frequency range.
Теги: electronic components gan microwave transistor telecommunication equipment компонентная база свч-транзистор телекоммуникационное оборудование
GALLIUM NITRIDE INTERNAL MATCHED MICROWAVE POWER TRANSISTOR FOR ADVANCED TELECOMMUNICATION EQUIPMENT AND OTHER APPLICATIONS
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